TS13003B datasheet(2/6 Pages) TSC

2 / 6 page

TS13003B

High Voltage NPN Transistor

2/6

Version: C07

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC = 1mA, IB = 0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC = 10mA, IE = 0

BVCEO

400

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

BVEBO

Collector-Emitter Cutoff Current

VCE = 400V, IB = 0

ICEO

Collector-Emitter Cutoff Current @45

VCE = 400V, IB = 0

ICEO

0.5

Collector Cutoff Current

VCB = 700V, IE = 0

ICBO

Collector Cutoff Current @45

VCB = 700V, IE = 0

ICBO

0.2

Emitter Cutoff Current

VEB = 9V, IC = 0

IEBO

0.1

Collector-Emitter Saturation Voltage*

IC / IB = 0.5A / 0.1A

IC / IB = 1.0A / 0.25A

IC / IB = 1.5A / 0.5A

VCE(SAT)1

VCE(SAT)2

VCE(SAT)3

0.2

0.3

0.5

Base-Emitter Saturation Voltage*

IC / IB = 0.5A / 0.1A

IC / IB = 1.0A / 0.25A

VBE(SAT)1

VBE(SAT)2

1.1

1.3

DC Current Gain*

VCE = 2V, IC = 10mA

VCE = 2V, IC = 400mA

VCE = 2V, IC = 1A

hFE1

hFE2

hFE3

Dynamic

Frequency

VCE = 10V, IC = 0.1A

MHz

Output Capacitance

VCB = 10V, f = 0.1MHz

Cob

Resistive Load Switching Time (Ratings)

Delay Time

0.05

0.2

Rise Time

0.6

Storage Time

tSTG

Fall Time

VCC = 125V, IC = 1A,

IB1 = IB2 = 0.2A,

tp = 25uS

Duty Cycle ≤1%

0.2

0.7

* Note: pulse test: pulse width ≤300uS, duty cycle ≤2%

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