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BAV101 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # BAV101
Description  500mW Hermetically Sealed Glass High Voltage Switching Diodes
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BAV101 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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BAV100/101/102/103
500mW Hermetically Sealed Glass
High Voltage Switching Diodes
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
MINI MELF
Features
High Voltage Switching Device
Mini Melf package
Surface device type mounting
Hermetically sealed glass
Compression bonded construction
All external surface are corrosion resistant
and leads are readily solderable
RoHS compliant
Matte Tin (Sn) lead finish
Color band indicates Negative Polarity
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
oCambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings
Type Number
Symbol
Value
Units
Repetitive Peak Reverse Voltage
VRRM
250
V
Average Rectified Forward Current
IF(AV)
200
mA
Non- Repetitive Peak Forward Surge Current
Pulse Width =1.0 Second
Pulse Width = 1.0 usecond
IFSM
1.0
4.0
A
Power Dissipation
Pd
500
mW
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 200
OC
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
Breakdown Voltage
BAV100
IR=100uA
BAV101
IR=100uA
BAV102
IR=100uA
BAV103
IR=100uA
BV
60
120
200
250
V
Forward Voltage
IF= 100mA
VF
1.0
V
Peak Reverse Current
BAV100
VR=50V
BAV101
VR=100V
BAV102
VR=150V
BAV103
VR=200V
IR
-
100
100
100
100
nA
Thermal Resistance, Junction to Ambient
RӨJA
350
oC/W
Junction Capacitance
VR=0, f=1.0MHz
Cj
-
5.0
pF
Reverse Recovery Time (Note)
trr
-
50
nS
Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, RL=100Ω.
Version: A07


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