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BAV101 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAV101 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() BAV100/101/102/103 500mW Hermetically Sealed Glass High Voltage Switching Diodes Pb RoHS COMPLIANCE RoHS COMPLIANCE MINI MELF Features High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surface are corrosion resistant and leads are readily solderable RoHS compliant Matte Tin (Sn) lead finish Color band indicates Negative Polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oCambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Ratings Type Number Symbol Value Units Repetitive Peak Reverse Voltage VRRM 250 V Average Rectified Forward Current IF(AV) 200 mA Non- Repetitive Peak Forward Surge Current Pulse Width =1.0 Second Pulse Width = 1.0 usecond IFSM 1.0 4.0 A Power Dissipation Pd 500 mW Operating and Storage Temperature Range TJ, TSTG -65 to + 200 OC Electrical Characteristics Type Number Symbol Min Max Units Breakdown Voltage BAV100 IR=100uA BAV101 IR=100uA BAV102 IR=100uA BAV103 IR=100uA BV 60 120 200 250 V Forward Voltage IF= 100mA VF 1.0 V Peak Reverse Current BAV100 VR=50V BAV101 VR=100V BAV102 VR=150V BAV103 VR=200V IR - 100 100 100 100 nA Thermal Resistance, Junction to Ambient RӨJA 350 oC/W Junction Capacitance VR=0, f=1.0MHz Cj - 5.0 pF Reverse Recovery Time (Note) trr - 50 nS Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, RL=100Ω. Version: A07 |
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