© 2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSP2222A Rev. 1.1.0

2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

2. Pulse test: Pulse width

≤ 300 μs, duty cycle ≤ 2%

Symbol

Parameter

Value

Unit

PD

Power Dissipation by RθJA

625

mW

Derate Above 25

°C5

mW/

°C

RθJC

Thermal Resistance, Junction-to-Case

83.3

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

200

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCBO

Collector-Base Breakdown Voltage

IC = 10 μA, IE = 0

75

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 10 mA, IB = 0

40

V

BVEBO

Emitter-Base Breakdown Voltage

IE = 10 μA, IC = 0

6.0

V

ICBO

Collector Cut-Off Current

VCB = 60 V, IE = 0

0.01

μA

IEBO

Emitter Cut-Off Current

VEB = 3.0 V, IC = 0

10

nA

hFE

DC Current Gain

VCE = 10 V, IC = 0.1 mA

35

VCE = 10 V, IC = 1 mA

50

VCE = 10 V, IC = 10 mA

75

VCE = 10 V, IC = 150 mA

(2)

100

300

VCE = 10 V, IC = 500 mA

(2)

40

VCE(sat)

Collector-Emitter Saturation Voltage(2)

IC = 150 mA, IB = 15 mA

0.3

V

IC = 500 mA, IB = 50 mA

1.0

VBE(sat)

Base-Emitter Saturation Voltage(2)

IC = 150 mA, IB = 15 mA

0.6

1.2

V

IC = 500 mA, IB = 50 mA

2.0

fT

Current Gain Bandwidth Product

IC = 20 mA, VCE = 20 V,

f = 100 MHz

300

MHz

Cob

Output Capacitance

VCB = 10 V, IE = 0,

f = 1.0 MHz

8pF

tON

Turn-On Time

VCC = 30 V, IC = 150 mA,

IB1 = 15 mA, VBE(off) = 0.5 V

35

ns

tOFF

Turn-Off Time

VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA

285

ns

NF

Noise Figure

IC = 100 μA, VCE = 10 V,

RS = 1 kΩ, f = 1.0 kHz

4dB