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STTH60R04 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STTH60R04
Description  Ultrafast recovery diode
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH60R04 Datasheet(HTML) 1 Page - STMicroelectronics

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March 2007
Rev 1
1/7
STTH60R04
Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low switching losses
High frequency and/or high pulsed current
operation
High junction temperature
Description
The STTH60R04 series uses ST's new 400 V
planar Pt doping technology. The STTH60R04 is
specially suited for switching mode base drive and
transistor circuits.
Available in a through-the-hole package, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Order codes
IF(AV)
60 A
VRRM
400 V
Tj
175° C
VF (typ)
0.95 V
trr (typ)
31 ns
Part Number
Marking
STTH60R04W
STTH60R04W
K
A
K
A
DO-247
STTH60R04W
Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
VRSM
Non repetitive peak reverse voltage
400
V
IF(RMS)
RMS forward current
100
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 110° C
60
A
IFRM
Repetitive peak forward current
tp = 5 µs F = 1 kHz square
375
A
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
650
A
Tstg
Storage temperature range
-65 to +175
° C
Tj
Operating junction temperature range
-40 to +175
° C
www.st.com


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