STTH60R04W datasheet(3/7 Pages) STMICROELECTRONICS

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STTH60R04

Characteristics

3/7

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

P(W)

100

10203040

50607080

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

FM(A)

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

J=150°C

(Maximum values)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

J=25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

Zth

(j-c)/Rth(j-c)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

DO-247

tp(s)

RM(A)

0.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0

100

1000

F= 60A

R=320V

j=125 °C

j=25 °C

dIF/dt(A/µs)

Figure 5.

Reverse recovery time versus

dIF/dt (typical values)

Figure 6.

Reverse recovery charges versus

dIF/dt (typical values)

RR(ns)

100

120

140

160

100

1000

F= 60A

R=320V

j=125 °C

j=25 °C

dIF/dt(A/µs)

RR(nC)

100

200

300

400

500

600

700

800

100

1000

F= 60 A

R=320V

j=125 °C

j=25 °C

dIF/dt(A/µs)

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