74LVQ32M datasheet(4/8 Pages) STMICROELECTRONICS

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CAPACITIVE CHARACTERISTICS

Symb ol

Parameter

Test Co nditi ons

Valu e

Un it

VCC

(V)

TA =25

-40 to 85

Min.

T yp.

Max.

Mi n.

Max.

CIN

Input Capacitance

3.3

CPD

Power Dissipation

Capacitance (note 1)

3.3

fIN = 10 MHz

1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto

Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD

•VCC •fIN +ICC/4(per gate)

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500

Ω, Input tr =tf =3 ns)

Symb ol

Parameter

T est Con ditio n

Valu e

Un it

VCC

(V)

TA =25

-40 to 85

Min.

T yp.

Max.

Mi n.

Max.

tPLH

tPHL

Propagation Delay Time

2.7

6.0

12.0

14.0

3.3

(*)

5.0

9.0

10.0

tOSLH

tOSHL

Output to Output Skew

Time (note 1, 2)

2.7

0.5

1.0

3.3

(*)

0.5

1.0

1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the

same direction, either HIGH or LOW (tOSLH =|tPLHm -tPLHn|, tOSHL =|tPHLm -tpHLn|)

2) Parameter guaranteed by design

(*) Voltage range is 3.3V

± 0.3V

74LVQ32

4/8

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