STM32F412RGY6 datasheet(98/201 Pages) STMICROELECTRONICS

98 / 201 page

Electrical characteristics

STM32F412xE/G

98/201

DocID028087 Rev 7

Table 34. Typical and maximum current consumption in Standby mode - VDD= 3.6 V

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA =

25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

TA =

125 °C

IDD_STBY

Supply current in

Standby mode

Low-speed oscillator (LSE in low drive

mode) and RTC ON

3.7

5.4

17.2

31.2

62.3

µA

Low-speed oscillator (LSE in high drive

mode) and RTC ON

4.5

6.2

18.0

32.0

63.2

RTC and LSE OFF

2.6

4.0

16.0

30.0

61.0(3)

1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.

2. Guaranteed by characterization, not tested in production unless otherwise specified.

3. Tested in production.

Table 35. Typical and maximum current consumptions in VBAT mode

Symbol Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA =

85 °C

TA =

105 °C

TA =

125 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT =

3.6 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain

supply

current

Low-speed oscillator (LSE in

low-drive mode) and RTC ON

0.74

0.87

1.04

1.11

3.0

5.0

10.0

µA

Low-speed oscillator (LSE in

high-drive mode) and RTC ON

1.52

1.70

1.97

2.09

3.8

5.8

11.6

RTC and LSE OFF

0.04

0.05

2.0

4.0

8.0

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization, not tested in production.

STM32F412RGY6 Datasheet(PDF) 98 Page - STMicroelectronics

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