PIC16F527-ISLASHSS datasheet(84/134 Pages) MICROCHIP

84 / 134 page

PIC16F527

DS40001652C-page 84

 2012-2014 Microchip Technology Inc.

15.2

DC Characteristics: PIC16F527 (Extended)

DC Characteristics

Standard Operating Conditions (unless otherwise specified)

Operating Temperature -40

C  TA  +125C (extended)

Param.

No.

Sym.

Characteristic

Min.

Typ.(1)

Max.

Units

Conditions

D001

VDD

Supply Voltage

2.0

5.5

See Figure 15-1

D002

VDR

RAM Data Retention Voltage(2)

—

1.5*

—

Device in Sleep mode

D003

VPOR

VDD Start Voltage to ensure

Power-on Reset

—VSS

—

See Section 8.5 “Power-on Reset

(POR)” for details.

D004

SVDD

VDD Rise Rate to ensure

Power-on Reset

0.05*

—

V/ms

See Section 8.5 “Power-on Reset

(POR)” for details.

D005

IDDP

Supply Current During Prog/Erase

—

1.0*

—

VDD = 5.0V

D010

IDD

Supply Current(3,4,6)

—

175

490

300

750

A

FOSC = 4 MHz, VDD = 2.0V

FOSC = 4 MHz, VDD = 5.0V

—

350

850

500

1300

A

FOSC = 8 MHz, VDD = 2.0V

FOSC = 8 MHz, VDD = 5.0V

—

1800

2500

AFOSC = 20 MHz, VDD = 5.0V

—

115

A

FOSC = 32 kHz, VDD = 2.0V

FOSC = 32 kHz, VDD = 5.0V

D020

IPD

Power-down Current(5)

—

0.1

0.35

9.0

15.0

A

VDD = 2.0V

VDD = 5.0V

D021

IBOR

BOR Current(5)

—

3.5

4.0

A

VDD = 3.0V

VDD = 5.0V

D022

IWDT

WDT Current(5)

—

1.0

8.0

A

VDD = 2.0V

VDD = 5.0V

D023

ICMP

Comparator Current(5)

—

A

VDD = 2.0V (per comparator)

VDD = 5.0V (per comparator)

D024

ICVREF

CVREF Current(5)

—

135

A

VDD = 2.0V (high range)

VDD = 5.0V (high range)

D025

IVFIR

Internal 0.6V Fixed Voltage

Reference Current(5)

—

100

175

135

235

A

VDD = 2.0V (reference and 1

comparator enabled)

VDD = 5.0V (reference and 1

comparator enabled)

D026

IAD2

A/D Current

—

0.5

0.8

10.0

16.0

A

2.0V, No conversion in progress

5.0V, No conversion in progress

D027

IOPA

Op Amp Current(5)

—

330

360

450

505

A

VDD = 2.0V

VDD = 5.0V

These parameters are characterized but not tested.

Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only and

is not tested.

2: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading,

oscillator type, bus rate, internal code execution pattern and temperature also have an impact on the current consumption.

4: The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT

enabled/disabled as specified.

5: For standby current measurements, the conditions are the same as IDD, except that the device is in Sleep mode. If a

module current is listed, the current is for that specific module enabled and the device in Sleep.

6: Does not include current through REXT. The current through the resistor can be estimated by the formula:

I = VDD/2REXT (mA) with REXT in k

.

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