 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRFP17N50LPBF Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRFP17N50LPBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRFP17N50LPbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting T J = 25°C, L = 3.0mH, RG = 25Ω, IAS = 16A. (See Figure 12). I SD = 16A, di/dt ≤ 347A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.28 0.32 Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 50 µA ––– ––– 2.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.4 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 11 ––– ––– S Qg Total Gate Charge ––– ––– 130 Qgs Gate-to-Source Charge ––– ––– 33 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 59 td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time ––– 51 ––– ns td(off) Turn-Off Delay Time ––– 50 ––– tf Fall Time ––– 28 ––– Ciss Input Capacitance ––– 2760 ––– Coss Output Capacitance ––– 325 ––– Crss Reverse Transfer Capacitance ––– 37 ––– Coss Output Capacitance ––– 3690 ––– pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 84 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 159 ––– Coss eff. (ER) Effective Output Capacitance ––– 120 ––– (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Units EAS Single Pulse Avalanche Energy d ––– mJ IAR Avalanche Current à ––– A EAR Repetitive Avalanche Energy ––– mJ Thermal Resistance Symbol Parameter Typ. Units RθJC Junction-to-Case ––– RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient ––– 62 Max. 0.56 ––– VDS = 25V ƒ = 1.0MHz, See Fig. 5 16 22 Max. 390 VGS = 0V,VDS = 0V to 400V g ID = 16A RG = 7.5Ω VGS = 10V, See Fig. 14a & 14b f VGS = 0V ID = 16A VDS = 400V VGS = 10V, See Fig. 7 & 15 f VDD = 250V VGS = 30V f = 1MHz, open drain Conditions VDS = 50V, ID = 9.9A VGS = -30V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 9.9A f |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
