TSM2N7002E

60V N-Channel MOSFET

1/7

Version: A07

SOT-23

SOT-323

Features

●

Low On-Resistance: 3Ω

●

Low Input and Output Leakage

Application

●

Direct Logic-Level Interface: TTL/CMOS

●

Solid-State Relays

Ordering Information

Part No.

Package

Packing

TSM2N7002ECX RF

SOT-23

3Kpcs / 7” Reel

TSM2N7002ECU RF

SOT-323

3Kpcs / 7” Reel

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous Drain Current

300

mA

Pulsed Drain Current

1

A

Continuous Source Current (Diode Conduction)

a,b

300

mA

Ta = 25

350

Maximum Power Dissipation

Ta = 75

220

mW

Operating Junction Temperature

+150

Operating Junction and Storage Temperature Range

-55 to +150

Thermal Performance

Parameter

Symbol

Limit

Unit

Lead Temperature (1/8” from case)

5

S

Junction to Ambient Thermal Resistance (PCB mounted)

357

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 5 sec.

c. The power dissipation of the package may result in a continuous drain current.

Block Diagram

N-Channel MOSFET

Pin Definition:

1. Gate

2. Source

3. Drain

PRODUCT SUMMARY

300

60

200