AM80814-025 datasheet(1/3 Pages) STMICROELECTRONICS

Part #	AM80814-025

Description	L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PRELIMINARY DATA

August 1992

L-BAND RADAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2LFL (S036)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 25 W MIN. WITH 7.0 dB GAIN

DESCRIPTION

AM80814-025 is a high power silicon Class C tran-

sistor designed for ultra-broadband L-Band radar

applications.

This device is capable of operation over a broad

range of pulse widths and duty cycles. Low RF

thermal resistance and computerized automatic

wire bonding techniques ensure high reliability and

product consistency.

AM80814-025 is supplied in the industry-standard

AMPAC™ hermetic Metal/Ceramic package incor-

porating Input/Output impedance matching.

PIN CONNECTION

BRANDING

80814-25

ORDER CODE

AM80814-025

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*(TC

≤ 75˚C)

75

W

IC

Device Current*

3.5

A

VCC

Collector-Supply Voltage*

38

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

2.3

°C/W

*Applies only to rated RF amplifier operation

AM80814-025

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/3

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