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AM81214-030 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM81214-030
Description  L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM81214-030 Datasheet(HTML) 1 Page - STMicroelectronics

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August 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.310 x .310 2LFL (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGEDIZED VSWR
∞:1
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 26 W MIN. WITH 7.2 dB GAIN
DESCRIPTION
The AM81214-030 device is a high power transistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding
∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied in the IMPAC
™ Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
81214-30
ORDER CODE
AM81214-030
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
≤ 100°C)
63
W
IC
Device Current*
2.75
A
VCC
Collector-Supply Voltage*
32
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
2.4
°C/W
*Applies only to rated RF amplifier operation
AM81214-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6


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