August 31, 1994

TELEMETRY APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2NLFL (S042)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

:1 VSWR CAPABILITY AT RATED

CONDITIONS

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

DESCRIPTION

The AM82223-010 is a common base, silicon

NPN bipolar transistor designed for high gain

and efficiency in the 2.2

− 2.3 GHz frequency

range.

Suitable for hi-rel aerospace telemetry applica-

tions, the AM82223-010 is provided in the indus-

try-standard AMPAC™ metal/ceramic hermetic

package and incorporates internal input and out-

put impedance matching structures along with a

rugged, emitter-site ballasted overlay die geome-

try.

AM82223-010 is capable of withstanding

load mismatch at any phase angle under full

rated operating conditions.

PIN CONNECTION

BRANDING

82223-10

ORDER CODE

AM82223-010

Symbol

Parameter

Value

Unit

Power Dissipation*

≤ 75˚C)

28

W

Device Current*

1.2

A

Collector-Supply Voltage*

26

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance

4.4

°C/W

*Applies only to rated RF amplifier operation

NOTE:

Thermal Resistance determined by Infra-Red Scanning of Hot-Spot

Junction Temperature at rated RF operating conditions.

AM82223-010

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/3