5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

IEC 61000-4-4 Electrical Fast Transient

Peak Power at 25 °C

80

A

IEC 61000-4-5 Surge (tp 8/20µs)

Peak Power at 25 °C

85

W

Peak Current at 25 °C

12

A

TA

Operating free-air temperature

–40

125

°C

Tstg

Storage temperature

–65

155

°C

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated

under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

5.2 ESD Ratings - JEDEC Specifications

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2500

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 ESD Ratings - IEC Specifications

VALUE

UNIT

V(ESD)

Electrostatic discharge

IEC 61000-4-2 Contact Discharge, all pins

±30000

V

IEC 61000-4-2 Air Discharge, all pins

±30000

5.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

0

3.6

V

TA

Operating Free Air Temperature

–40

125

°C

5.5 Thermal Information

THERMAL METRIC(1)

ESDS302

ESDS304

UNIT

DBV (SOT-23)

DBV (SOT-23)

5 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

176.2

133.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

125.7

85.1

°C/W

RθJB

Junction-to-board thermal resistance

88.4

49.4

°C/W

ΨJT

Junction-to-top characterization parameter

71.4

30.1

°C/W

ΨJB

Junction-to-board characterization parameter

88.2

49.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

ESDS302, ESDS304

SLVSEG8B – MAY 2018 – REVISED JANUARY 2024

www.ti.com

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