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LM5008AMM/NOPB Datasheet(PDF) 4 Page - Texas Instruments |
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LM5008AMM/NOPB Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 32 page ![]() 4 LM5008A SNVS583H – MARCH 2009 – REVISED OCTOBER 2018 www.ti.com Product Folder Links: LM5008A Submit Documentation Feedback Copyright © 2009–2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VIN to GND –0.3 100 V BST to GND –0.3 114 V SW to GND (steady-state) –1 V BST to VCC 100 V BST to SW 14 V VCC to GND 14 V All other inputs to GND –0.3 7 V Storage temperature, Tstg –55 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VIN 6 95 V Operating junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) LM5008A UNIT DGK (VSSOP) NGU (WSON) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 139.7 42 °C/W RθJC(top) Junction-to-case (top) thermal resistance 51.2 27.6 °C/W RθJB Junction-to-board thermal resistance 70.5 18.5 °C/W ψJT Junction-to-top characterization parameter 3.4 0.3 °C/W ψJB Junction-to-board characterization parameter 69.5 18.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — 4.3 °C/W |
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