BAS70-07 datasheet(3/4 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

0.00

0.05

0.10

0.15

0.20

0.25

0.30

IM(A)

Ta=50°C

Ta=25°C

Ta=100°C

t(s)

δ=0.5

Fig.3 : Non repetitive surge peak forward current

versus overload duration (maximum values).

5 10 15 20 25 30 35 40 45 50 55 60 65 70

1E-3

1E-2

1E-1

1E+0

1E+1

IR(µA)

Tj=25°C

Tj=100°C

VR(V)

Fig.5 : Reverse leakage current versus reverse

voltage applied (typical values).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

0.01

0.10

1.00

Zth(j-a)/Rth(j-a)

tp(s)

δ=tp/T

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

Fig.4 : Relative variation of thermal impedance

junction to ambient versus pulse duration (alumine

substrate 10mm x 8mm x 0.5mm).

100

125

1E-2

1E-1

1E+0

1E+1

1E+2

IR(µA)

VR=70V

Tj(°C)

Fig.6 : Reverse leakage current versus junction

temperature (typical values).

100

0.1

1.0

2.0

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig.7 : Junction capacitance versus reverse

voltage applied (typical values).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

1E-4

1E-3

1E-2

7E-2

IFM(A)

Tj=100°C

Typical values

Tj=25°C

Maximum values

Tj=25°C

Typical values

VFM(V)

Fig.8 : Forward voltage drop versus forward

current.

BAS70-07

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