LMV761, LMV762, LMV762Q-Q1

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SNOS998I – FEBRUARY 2002 – REVISED OCTOBER 2015

6.2 ESD Ratings: LMV761, LMV762

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)

± 2000

V(ESD)

Electrostatic discharge(1)

V

Machine model

± 200

(1)

Unless otherwise specified human body model is 1.5 k

Ω in series with 100 pF. Machine model 200 pF.

(2)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings: LMV762Q-Q1

VALUE

UNIT

Human-body model (HBM), per AEC Q100-002(1)

± 2000

V(ESD)

Electrostatic discharge

V

Machine model

± 200

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.4 Recommended Operating Conditions

MIN

MAX

UNIT

Supply voltage (V+ – V−)

2.7

5.25

V

Temperature range

−40

125

°C

6.5 Thermal Information

LMV761

LMV762, LMV762Q-Q1

THERMAL METRIC(1)

D (SOIC)

DBV (SOT-23) DGK (VSSOP)

UNIT

8 PINS

6 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance (2)

190

265

235

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJ(MAX) – TA) RθJA. All numbers apply for packages soldered directly into a PCB.

6.6

2.7-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TJ = 25°C, VCM = V

+ / 2, V+ = 2.7 V, V− = 0 V−.

PARAMETER

TEST CONDITIONS

MIN(1)

TYP(2)

MAX(1)

UNIT

0.2

VOS

Input offset voltage

mV

apply at the temperature extremes(3)

1

IB

Input bias current(4)

0.2

50

pA

IOS

Input offset current(4)

0.001

5

pA

Common-mode rejection

CMRR

0 V < VCM < VCC – 1.3 V

80

100

dB

ratio

PSRR

Power supply rejection ratio

V+ = 2.7 V to 5 V

80

110

dB

Input common-mode voltage

apply at the temperature

CMVR

CMRR > 50 dB

−0.3

1.5

V

range

extremes(3)

Output swing high

IL = 2 mA, VID = 200 mV

V+ – 0.35 V+ – 0.1

V

VO

Output swing low

IL = −2 mA, VID = –200 mV

90

250

mV

Sourcing, VO = 1.35 V, VID = 200 mV

6

20

ISC

Output short circuit current(5)

mA

Sinking, VO = 1.35 V, VID = –200 mV

6

15

(1)

All limits are specified by testing or statistical analysis.

(2)

Typical values represent the most likely parametric norm.

(3)

Maximum temperature ensured range is

−40°C to +125°C.

(4)

Specified by design.

(5)

Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical

tables under conditions of internal self-heating where TJ > TA. See Recommended Operating Conditions for information on temperature

de-rating of this device. Absolute Maximum Rating indicate junction temperature limits beyond which the device may be permanently

degraded, either mechanically or electrically.

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