SLAS787B datasheet(30/52 Pages) TI2

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MSP430G2231-Q1

SLAS787B – NOVEMBER 2011 – REVISED MARCH 2014

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9.28 10-Bit ADC, Temperature Sensor and Built-In VMID

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

VCC

MIN

TYP

MAX

UNIT

Temperature sensor supply

REFON = 0, INCHx = 0Ah,

ISENSOR

3 V

µA

current(1)

TA = 25°C

TCSENSOR

ADC10ON = 1, INCHx = 0Ah (2)

3 V

3.55

mV/°C

Sample time required if channel

ADC10ON = 1, INCHx = 0Ah,

tSensor(sample)

3 V

µs

10 is selected (3)

Error of conversion result

≤ 1 LSB

IVMID

Current into divider at channel 11

ADC10ON = 1, INCHx = 0Bh

3 V

(4)

µA

ADC10ON = 1, INCHx = 0Bh,

VMID

VCC divider at channel 11

3 V

1.5

VMID ≉ 0.5 × VCC

Sample time required if channel

ADC10ON = 1, INCHx = 0Bh,

tVMID(sample)

3 V

1220

11 is selected (5)

Error of conversion result

≤ 1 LSB

(1)

The sensor current ISENSOR is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is

high). When REFON = 1, ISENSOR is included in IREF+. When REFON = 0, ISENSOR applies during conversion of the temperature sensor

input (INCH = 0Ah).

(2)

The following formula can be used to calculate the temperature sensor output voltage:

VSensor,typ = TCSensor (273 + T [°C] ) + VOffset,sensor [mV] or

VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV]

(3)

The typical equivalent impedance of the sensor is 51 k

Ω. The sample time required includes the sensor-on time tSENSOR(on).

(4)

No additional current is needed. The VMID is used during sampling.

(5)

The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed.

9.29 Flash Memory

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST

VCC

MIN

TYP

MAX

UNIT

CONDITIONS

VCC(PGM/ERASE)

Program and erase supply voltage

2.2

3.6

fFTG

Flash timing generator frequency

257

476

kHz

IPGM

Supply current from VCC during program

2.2 V, 3.6 V

IERASE

Supply current from VCC during erase

2.2 V, 3.6 V

tCPT

Cumulative program time(1)

2.2 V, 3.6 V

tCMErase

Cumulative mass erase time

2.2 V, 3.6 V

Program/erase endurance

104

105

cycles

tRetention

Data retention duration

TJ = 25°C

years

tWord

Word or byte program time

(2)

tFTG

tBlock, 0

Block program time for first byte or word

(2)

tFTG

Block program time for each additional byte or

tBlock, 1-63

(2)

tFTG

word

tBlock, End

Block program end-sequence wait time

(2)

tFTG

tMass Erase

Mass erase time

(2)

10593

tFTG

tSeg Erase

Segment erase time

(2)

4819

tFTG

(1)

The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming

methods: individual word/byte write and block write modes.

(2)

These values are hardwired into the Flash Controller's state machine (tFTG = 1/fFTG).

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