MUX508IPW datasheet(25/42 Pages) TI2

25 / 42 page

±9

±6

±3

±15

±10

±5

Drain voltage (V)

C011

DD = 12 V

SS = 0 V

DD = 10 V

SS = ±10 V

DD = 15 V

SS = ±15 V

±2

±1

±15

±10

±5

Source Voltage (V)

C025

DD = 12 V

SS = 0 V

DD = 10 V

SS = ±10 V

DD = 15 V

SS = ±15 V

MUX508, MUX509

www.ti.com

SBAS758C – JANUARY 2016 – REVISED SEPTEMBER 2016

Product Folder Links: MUX508 MUX509

Submit Documentation Feedback

Feature Description (continued)

The MUX50x have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection

to as low as 0.3 pC at VS = 0 V, and ±0.6 pC in the full signal range, as shown in Figure 39.

Figure 39. Source-to-Drain Charge Injection vs Source or Drain voltage

The drain-to-source charge injection becomes important when the device is used as a demultiplexer (demux),

where D becomes the input and Sx becomes the output. Figure 40 shows the drain-to-source charge injection

across the full signal range.

Figure 40. Drain-to-Source Charge Injection vs Source or Drain voltage

9.3.3 Bidirectional Operation

The MUX50x are operable as both a mux or demux. The source (Sx, SxA, SxB) and drain (D, DA, DB) pins of

the MUX50x are used either as input or output. Each MUX50x channel has very similar characteristics in both

directions.

MUX508IPW Datasheet(PDF) 25 Page - Texas Instruments

MUX508IPW Datasheet(HTML) 25 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

Datasheet Download

Link URL