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STGW30N90D Datasheet(PDF) 3 Page - STMicroelectronics |
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STGW30N90D Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STGW30N90D Electrical ratings 3/10 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 900 V IC (1) 1. Calculated according to the iterative formula: Collector current (continuous) at 25°C 60 A IC (1) Collector current (continuous) at 100°C 30 A ICL (2) 2. Vclamp=900V, Tj=125°C, RG=10Ω, VGE=15V Collector current (pulsed) 135 A VGE Gate-emitter voltage ±25 V PTOT Total dissipation at TC = 25°C 220 W If Diode RMS forward current at TC = 25°C 30 A Tj Operating junction temperature –55 to 150 °C Tstg Storage temperature Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.57 °C/W Rthj-amb Thermal resistance junction-ambient (diode) 1.6 °C/W Rthj-amb Thermal resistance junction-ambient (IGBT) 50 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
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