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SIC1182KQ Datasheet(PDF) 4 Page - Power Integrations, Inc.

Part # SIC1182KQ
Description  Up to 8 A Single Channel SiC MOSFET and IGBT Gate
PDF  18 Pages
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Manufacturer  POWERINT [Power Integrations, Inc.]
Direct Link  http://www.powerint.com
Logo POWERINT - Power Integrations, Inc.

SIC1182KQ Datasheet(HTML) 4 Page - Power Integrations, Inc.

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Rev. C 12/22
4
SIC1181KQ / SIC1182KQ
www.power.com
Safe Power-Up and Power-Down
It is recommended during power-up and power-down that the IN
pin stays at logic low. Any supply voltage related to VCC, VISO, VEE
and VGXX pins should be stabilized using ceramic capacitors C
1, C2,
C
S1, CS2, and CGXX respectively as shown in Figure 5, 6, 7 and 8. After
supply voltages reach their nominal values, the driver will begin to
function after a time delay t
START.
Short-Pulse Operation
If command signals applied to IN are shorter than the minimum
specified by t
GE(MIN), then SIC118xKQ output signals at GH and GL will
extend to a value of t
GE(MIN). The duration of pulses longer than tGE(MIN)
will not be changed.
Short-Circuit Protection
The SIC118xKQ uses the semiconductor device drain to source voltage
to detect a short-circuit utilizing a sensing resistor network. With
the help of a well stabilized V
VISO and a Schottky diode connected
between semiconductor device gate and VISO the V
GS is clamped to
the regulated VISO and the short-circuit current as well related SiC
semiconductor energy will be limited.
During the off-state, SNS is internally connected to the COM pin. In
case an optional filter-capacitor is applied between SNS pin and COM
this capacitor is discharged.
When the driver is in turn-on transition or in on-state, the short-circuit
detection algorithm through SNS is activated after an ASIC internally
blanking time has elapsed. If now a voltage drop of about 0.4 V
(typically) is detected at SNS referenced to VEE, this is interpreted
as a detected short-circuit. The driver initiates a short-circuit turn-
off without receiving a primary-side command. A fault command is
sent to the primary side and SO is pulled to GND for typically 10 µs.
During this time the driver ignores any command signal at the IN pin.
In parallel to the short-circuit turn-off transition phase, the SCALE-
iDriver’s internal Advanced Active Clamping overvoltage limitation
scheme is activated.
V
DS Overvoltage Limitation (Advanced Active Clamping)
If the driver is in turn-off transition or in off-state the overvoltage
limitation algorithm is activated at SNS and the internal reference is
COM. In case a current of typically 440 µA (turn-off transition) to
520 µA (off-state) is feed to SNS, the driver will regulate the gate
current to limit the turn-off di/dt and therefore the overvoltage at
drain to source during turn-off.
Over-Current Detection
In case the semiconductor device offers a so called current-sense
terminal, this signal can be fed into SNS with reference to VEE. As
described in the short-circuit protection section, a voltage of about
0.4 V at SNS with reference to VEE will now be handled as an
over-current. That leads to an over-current turn-off, following the
same scheme as for a short-circuit condition.



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