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V1.0

25/09/19

Complementary Power Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Description:

Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and

switching applications.

Features:

• Power Dissipation-PD = 90W at TC = 25°C

• • DC Current Gain hFE = 20 ~ 100 at IC = 4A

• • VCE(sat) = 1.1V (Max.) at IC = 4A, IB = 400mA

Maximum Ratings

Characteristic

Symbol

Rating

Unit

Collector-Emitter Voltage

VCEO

60

V

Collector-Emitter Voltage

VCER

70

Collector-Base Voltage

VCBO

100

Emitter-Base Voltage

VEBO

7

Collector Current-Continuous

IC

15

A

Base Current

IB

7

Total Power Dissipation at TC = 25°C

Derate above 25°C

PD

90

0.72

W

W/°C

Operating and Storage Junction Temperature Range

TJ, TSTG

-65 to +150

°C

Thermal Characteristics

Characteristic

Symbol

Max.

Unit

Thermal Resistance Junction to Case

Rθjc

1.39

°C/W