W U X I C HI N A R E S O U RC E S H UA J I N G M I C R O E L E C T R O N I C S C O . , LT D.

P a g e 2 o f 1 0

201 5 V 01

○

R

CS20N60F A9H

Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID=250µA

600

--

--

V

ΔBV

DSS/ΔTJ

Bvdss Temperature Coefficient

ID=250uA,Reference25℃

--

0.65

--

V/℃

IDSS

Drain to Source Leakage Current

VDS = 600V, VGS= 0V,

Ta = 25℃

--

--

1

µA

VDS =480V, VGS= 0V,

Ta = 125℃

100

IGSS(F)

Gate to Source Forward Leakage

VGS= 30V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage

VGS =-30V

--

--

-100

nA

ON Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

RDS(ON)

Drain-to-Source On-Resistance

VGS=10V,ID=10A

--

0.36

0.45

Ω

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

2.0

--

4.0

V

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

gfs

Forward Trans conductance

VDS=15V, ID =10A

--

17

--

S

Ciss

Input Capacitance

VGS = 0V VDS = 25V

f = 1.0MHz

--

2847

pF

Coss

Output Capacitance

--

252

Crss

Reverse Transfer Capacitance

--

20

Resistive Switching Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

td(ON)

Turn-on Delay Time

ID =20A

VDD = 300V

RG = 25Ω

--

36

ns

tr

Rise Time

--

73

td(OFF)

Turn-Off Delay Time

--

166

tf

Fall Time

--

73

Qg

Total Gate Charge

ID =20A

VDD =300V

VGS = 10V

--

61

nC

Qgs

Gate to Source Charge

--

14

--

Qgd

Gate to Drain (“Miller”)Charge

--

24

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