5

INA253

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SLOS954A – JULY 2018 – REVISED DECEMBER 2018

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Copyright © 2018, Texas Instruments Incorporated

(1)

The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See

the Integrated Shunt Resistor section for more information.

(2)

See Maximum Continuous Current for additional information on the current derating and review layout recommendations to improve the

current handling capability of the device at higher temperatures.

(3)

System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress

related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical

Characteristics table.

7.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VCM

Common-mode input range

VIN+ = –4 V to +80 V, ISENSE = 0 A,

TA = –40°C to +125°C

–4

80

V

CMR

Common-mode rejection

VIN+ = –4 V to +80 V, ISENSE = 0 A,

TA = –40°C to +125°C

±125

±500

µA/V

f = 50 kHz

±13

mA/V

IOS

Offset current, input-referred

ISENSE = 0 A

±2.5

±15

mA

dIOS/dT Offset current drift

ISENSE = 0 A, TA = –40°C to +125°C

25

125

µA/°C

PSRR

Power-supply rejection ratio

VS = 2.7 V to 5.5 V, ISENSE = 0 A

±0.5

±5

mA/V

IB

Input bias current

IB+, IB–, ISENSE = 0 A

90

µA

Reference input range

0

VS

V

SHUNT RESISTOR

RSHUNT

Shunt resistance (SH+ to SH–)

Equivalent resistance when used with onboard

amplifier

1.998

2

2.002

m

Ω

Used as stand-alone resistor(1)

1.9

2

2.1

Package resistance

IS+ to IS–

4.5

m

Ω

Package inductance

IS+ to IS–

3

nH

Resistor temperature coefficient

TA = –40°C to +125°C

15

ppm/°C

TA = –40°C to 0°C

50

TA = 0°C to 125°C

10

ppm/°C

ISENSE

Maximum continuous current(2)

TA = –40°C to +85°C

±15

A

Shunt short time overload

ISENSE = 30 A for 5 seconds

±0.05%

Shunt thermal shock

–65°C to +150°C, 500 cycles

±0.1%

Shunt resistance to solder heat

260°C solder, 10 seconds

±0.1%

Shunt high temperature exposure

1000 hours, TA = 150°C

±0.15%

Shunt cold temperature storage

24 hours, TA = –65°C

±0.025%

OUTPUT

G

Gain

INA253A1

100

mV/A

INA253A2

200

INA253A3

400

mV/A

System gain error(3)

GND + 50 mV

≤ VOUT ≤ VS – 200 mV,

TA = 25°C

±0.05%

±0.4%

TA = –40°C to +125°C

±45

ppm/°C

Nonlinearity error

GND + 10 mV

≤ VOUT ≤ VS – 200 mV

±0.01%

Reference divider accuracy

VOUT = |(VREF1 – VREF2)| / 2 at ISENSE = 0 A,

TA = –40°C to +125°C

0.02%

0.1%

RVRR

Reference voltage rejection ratio (input-

referred)

INA253A2

2.5

mA/V

INA253A1, INA253A3

1

Maximum capacitive load

No sustained oscillation

1

nF

VOLTAGE OUTPUT

Swing to VS power-supply rail

RL = 10 kΩ to GND, TA = –40°C to +125°C

VS – 0.05

VS – 0.2

V

Swing to GND

RL = 10 kΩ to GND, ISENSE = 0 A,

VREF1 = VREF2 = 0 V, TA = –40°C to +125°C

VGND + 1

VGND + 10

mV