December 2001

2001 Fairchild Semiconductor Corporation

FDG6316P Rev D W)

FDG6316P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This

P-Channel

1.8V

specified

MOSFET

uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

Features

• –0.7 A, –12 V.

RDS(ON) = 270 m

Ω @ VGS = –4.5 V

RDS(ON) = 360 m

Ω @ VGS = –2.5 V

RDS(ON) = 650 m

Ω @ VGS = –1.8 V

• Low gate charge

• High performance trench technology for extremely

low RDS(ON)

• Compact industry standard SC70-6 surface mount

package

S

G

D

D

G

S

Pin 1

SC70-6

S

G

D

D

G

S

6 or 3

5 or 2

4 or 1

1 or 4

2 or 5

3 or 6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings T

A=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–12

V

VGSS

Gate-Source Voltage

± 8

V

ID

Drain Current – Continuous

(Note 1)

–0.7

A

– Pulsed

–1.8

PD

Power Dissipation for Single Operation

(Note 1)

0.3

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

415

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.16

FDG6316P

7’’

8mm

3000 units