BAS29, Rev. A

BAS29

Small Signal Diode

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

2002 Fairchild Semiconductor Corporation

3

1

2

SOT-23

1

2

3

L20

Absolute Maximum Ratings*

T

A = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage

120

V

IF(AV)

Average Rectified Forward Current

200

mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

2.0

A

A

T

stg

Storage Temperature Range

-55 to +150

°C

T

J

Operating Junction Temperature

150

°C

Thermal Characteristics

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P

D

Power Dissipation

350

mW

RθJA

Thermal Resistance, Junction to Ambient

357

°C/W

Symbol

Parameter

Test Conditions

Min

Max

Units

V

R

Breakdown Voltage

I

R = 1.0 mA

120

V

V

F*

Forward Voltage

I

F = 10 mA

I

F = 50 mA

I

F = 100 mA

I

F = 200 mA

I

F = 400 mA

0.75

0.84

0.90

1.00

1.25

V

V

V

V

V

I

R*

Reverse Current

V

R = 90 V

V

R = 90 V, TA = 150°C

100

100

nA

µA

C

T

Total Capacitance

V

R = 0, f = 1.0 MHz

2.0

pF

t

rr

Reverse Recovery Time

I

F = IR = 30 mA, IRR = 3.0 mA,

R

L = 100 Ω

50

ns

*Pulse test : Pulse width=300us, Duty Cycle=2%

Connection Diagram

3

1

2NC