CSD15380F3 20-V N-Channel FemtoFET™ MOSFET

1 Features

• Ultra-low CiSS and COSS

• Ultra-low Qg and Qgd

• Ultra-small footprint

– 0.73 mm × 0.64 mm

• Ultra-low profile

– 0.36-mm max height

• Integrated ESD protection diode

– Rated > 4-kV HBM

– Rated > 2-kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. Ultra-

low capacitance improves switching speeds. When

used in data line applications, the low capacitance

minimizes noise coupling. This technology is capable

of replacing standard small signal MOSFETs while

providing a substantial reduction in footprint size.

0.64 mm

0.73 mm

0.36 mm

Typical Part Dimensions

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

20

V

Qg

Gate Charge Total (4.5 V)

0.216

nC

Qgd

Gate Charge Gate-to-Drain

0.027

nC

RDS(on)

Drain-to-Source

On-Resistance

VGS = 2.5 V

2220

mΩ

VGS = 4.5 V

1170

VGS = 8 V

990

VGS(th)

Threshold Voltage

1.1

V

Device Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD15380F3

3000

7-Inch Reel

Femto

0.73-mm × 0.64-mm

Land Grid Array (LGA)

Tape

and

Reel

CSD15380F3T

250

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C (unless otherwise stated)

VALUE

UNIT

VDS

Drain-to-Source Voltage

20

V

VGS

Gate-to-Source Voltage

10

V

ID

Continuous Drain Current(1)

0.9

A

Continuous Drain Current(2)

0.5

IDM

Pulsed Drain Current(3)

1.6

A

PD

Power Dissipation(1)

1.4

W

Power Dissipation(2)

0.5

V(ESD)

Human-Body Model (HBM)

4

kV

Charged-Device Model (CDM)

2

TJ,

Tstg

Operating Junction and

Storage Temperature

–55 to 150

°C

(1)

Typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm)

thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB

(2)

Typical RθJA = 255°C/W on min Cu board

(3)

Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

D

G

S

Top View

CSD15380F3

SLPS579B – MAY 2016 – REVISED FEBRUARY 2022

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.