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CSD19531KCS Datasheet(PDF) 3 Page - Texas Instruments |
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CSD19531KCS Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  4 Specifications 4.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0V, ID = 250μA 100 V IDSS Drain-to-source leakage current VGS = 0V, VDS = 80V 1 μA IGSS Gate-to-source leakage current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250μA 2.2 2.7 3.3 V RDS(on) Drain-to-source on resistance VGS = 6V, ID = 60A 7.3 8.8 mΩ VGS = 10V, ID = 60A 6.4 7.7 gfs Transconductance VDS = 10V, ID = 60A 137 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0V, VDS = 50V, ƒ = 1MHz 2980 3870 pF Coss Output capacitance 560 728 pF Crss Reverse transfer capacitance 13 17 pF RG Series gate resistance 1.3 2.6 Ω Qg Gate charge total (10V) VDS = 50V, ID = 60A 38 49 nC Qgd Gate charge gate-to-drain 7.5 nC Qgs Gate charge gate-to-source 11.9 nC Qg(th) Gate charge at Vth 7.3 nC Qoss Output charge VDS = 50V, VGS = 0V 98 nC td(on) Turnon delay time VDS = 50V, VGS = 10V, IDS = 60A, RG = 0Ω 8.4 ns tr Rise Time 7.2 ns td(off) Turnoff delay time 16 ns tf Fall time 4.1 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 60A, VGS = 0V 0.9 1 V Qrr Reverse recovery charge VDS= 50V, IF = 60A, di/dt = 300A/μs 270 nC trr Reverse recovery time 83 ns 4.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.7 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W www.ti.com CSD19531KCS SLPS407D – SEPTEMBER 2013 – REVISED MAY 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD19531KCS |
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