STM32WB10CCU5 datasheet(56/110 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32WB10CC

56/110

DS13259 Rev 2

6.3

Operating conditions

6.3.1

Summary of main performance

6.3.2

General operating conditions

Table 19. Main performance at VDD = 3.3 V

Parameter

Test conditions

Typ

Unit

ICORE

Core current



consumption

VBAT (VBAT = 1.8 V, VDD = 0 V)

0.002

µA

Shutdown (VDD = 2.0 V)

0.018

Standby (VDD = 3.0 V, 48 Kbytes RAM retention)

0.340

Sleep (16 MHz)

0.610

LP run (2 MHz)

175

Run (64 MHz)

5850

Radio RX(1)

7700

Radio TX 0 dBm output power(1)

8600

IPERI

Peripheral

current

consumption

BLE

Advertising(2) with Stop1

(Tx = 0 dBm; Period 1.28 s; 31 bytes, 3 channels)

19.2

Advertising(2) with Stop1

(Tx = 0 dBm, 6 bytes; period 1.24 s, 3 channels)

LP timers

5.800

RTC

1.750

1. Power consumption including RF subsystem and digital processing.

2. Power consumption integrated over 300 s including Cortex M4, RF subsystem, digital processing and Cortex M0+.

Table 20. General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

064

MHz

fPCLK1 Internal APB1 clock frequency

fPCLK2 Internal APB2 clock frequency

VDD

Standard operating voltage

2.0(1)

3.6

VDDA

Analog supply voltage

ADC used

2.0

ADC not used

VDD

VBAT

Backup operating voltage

1.55

3.6

VDDRF Minimum RF voltage

2.0

VIN

I/O input voltage

TT_xx I/O

–0.3

VDD + 0.3

All I/O except TT_xx

–0.3

min (min (VDD, VDDA) +

3.6 V, 5.5 V)(2)(3)

Power dissipation

UFQFPN48

722

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