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BUR52 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUR52 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  BUR52 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM June 1997 1 2 TO-3 (version " P ") ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 350 V VCEO Collector-Emitter Voltage (IB = 0) 250 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current 60 A ICM Collector Peak Current (tp = 10 ms) 80 A IB Base Current 16 A Ptot Total Dissipation at Tc ≤ 25 oC 350 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC 1/4 |
Similar Part No. - BUR52 |
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Similar Description - BUR52 |
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