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STM32U073RCI3 Datasheet(PDF) 82 Page - STMicroelectronics |
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STM32U073RCI3 Datasheet(HTML) 82 Page - STMicroelectronics |
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82 / 146 page ![]() Table 62. Electrical sensitivities Symbol Parameter Conditions Class LU Static latch-up class TA = +130 °C conforming to JESD78A II 6.3.13 I/O current injection characteristics As a general rule, current injection to the I/O pins, due to external voltage below VSS or above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of the 5 µA/+0 µA range) or other functional failure (for example reset occurrence or oscillator frequency deviation). The characterization results are given in Table 63. I/O current injection susceptibility. Negative induced leakage current is caused by negative injection and positive induced leakage current is caused by positive injection. Table 63. I/O current injection susceptibility Evaluated by characterization, not tested in production. Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ Injected current on all pins except PA4, PA5 -5 N/A(1) mA Injected current on PA4, PA5 pins -5 0 1. Injection is not possible. 6.3.14 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 64. I/O static characteristics are derived from tests performed under the conditions summarized in Section 6.3.1: General operating conditions. All I/Os are designed as CMOS- and TTL-compliant. Note: For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO configuration for hardware settings and low-pow er consumption” available from the ST website www.st.com. Table 64. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL(1) I/O input low level voltage 1.62 V < VDDIOx < 3.6 V - - 0.3 x VDDIOx (2) V I/O input low level voltage 1.62 V < VDDIOx < 3.6 V - - 0.39 x VDDIOx - 0.06(3) VIH(1) I/O input high level voltage 1.62 V < VDDIOx < 3.6 V 0.7 x VDDIOx (2) - - V I/O input high level voltage 1.62 V < VDDIOx < 3.6 V 0.49 x VDDIOX + 0.26 (3) - - Vhys(3) TT_xx, FT_xxx and NRST I/O input hysteresis 1.62 V < VDDIOx < 3.6 V - 200 - mV Ilkg(4) FT_xx input leakage current(3)(5) VIN ≤ Max(VDDXXX)(6)(7) - - ±100 nA STM32U073x8/B/C Electrical characteristics DS14548 - Rev 2 page 82/146 |
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