STM32U073RCT3TR datasheet(73/146 Pages) STMICROELECTRONICS

73 / 146 page

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST

microcontrollers” available from the ST website www.st.com.

Figure 19. Typical application with a 32.768 kHz crystal

OSC32_IN

OSC32_OUT

Drive

programmable

amplifier

fLSE

32.768 kHz resonator

Resonator with integrated capacitors

CL1

CL2

Note: CL1 and CL2 are external load capacitances. Cs (stray capacitance) is the sum of the device OSC32_IN/OSC32_OUT pins

equivalent parasitic capacitance (CS_PARA), and the PCB parasitic capacitance.

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

6.3.8

Internal clock source characteristics

The parameters given in Table 52. HSI16 oscillator characteristics are derived from tests performed under

ambient temperature and supply voltage conditions summarized in Section 6.3.1: General operating conditions.

The provided curves are evaluated by characterization, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 52. HSI16 oscillator characteristics

Evaluated by characterization, not tested in production.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C

15.88

16.08

MHz

TRIM

HSI16 user trimming step

From code 127 to 128

-8

-6

-4

From code 63 to 64

From code 191 to 192

-5.8

-3.8

–1.8

For all other code increments

0.2

0.3

0.4

DuCy(HSI16)(1)

Duty Cycle

∆Temp(HSI16)

HSI16 oscillator frequency drift over temperature

TA= 0 to 85 °C

-1

TA= -40 to 125 °C

-2

1.5

∆VDD(HSI16)

HSI16 oscillator frequency drift over VDD

VDD=1.62 V to 3.6 V

-0.1

0.05

tsu(HSI16)(1)

HSI16 oscillator start-up time

0.8

1.2

μs

tstab(HSI16)(1)

HSI16 oscillator stabilization time

μs

IDD(HSI16)(1)

HSI16 oscillator power consumption

155

190

μA

1. Specified by design, not tested in production.

STM32U073x8/B/C

Electrical characteristics

DS14548 - Rev 2

page 73/146

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