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BY239L-800 Datasheet(PDF) 1 Page - STMicroelectronics |
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BY239L-800 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 2 page ![]() BY239L-800 ® August 1998 - Ed: 3A RECTIFIER DIODES STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP Symbol Parameter Value Unit IF(AV) Average forward current * Tc=100 °C10 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 140 A Ptot Power dissipation * Tc=100 °C 12.5 W Tstg Tj Storage and junction temperature range - 40 to + 125 °C * Single phase, half wave, resistive or inductive load. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Test Conditions Min. Typ. Max. Unit VF * Tj = 25 °CIF = 30 A 1.45 V IR ** Tj = 125 °CVR = VRRM 500 µA Pulse test : * tp = 380 µs, duty cycle < 2 % ** tp = 5 ms, duty cycle < 2 % ELECTRICAL CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case 2 °C/W THERMAL RESISTANCE Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 800 V TO220AC (Plastic) K A IF(av) 10 A VRRM 800 V VF (max) 1.45 V MAIN PRODUCTS CHARACTERISTICS 1/2 |
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