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TEA2025 Datasheet(PDF) 2 Page - STMicroelectronics |
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TEA2025 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Device overview and electrical specifications TEA2025 2/11 Doc ID 1523 Rev 4 1 Device overview and electrical specifications Table 2. Absolute maximum ratings Figure 2. Pin connections PowerDIP16 (12+2+2) Table 3. Thermal data Symbol Parameter Value Unit VS Supply voltage 15 V IO Ouput peak current 1.5 A TJ Junction temperature 150 °C Tstg Storage temperature 150 °C Symbol Description PowerDIP16 (12+2+2)(1) 1. Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15 cm glass-epoxy substrate with a 35 mm thick copper surface of 5 cm2. Unit Rth j-case Thermal resistance junction-case Max 15 °C/W Rth j-amb Thermal resistance junction-ambient Max 60 °C/W Obsolete Product(s) - Obsolete Product(s) |
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