Product label

Features

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AEC-Q101 qualified

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PPAP capable

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No or negligible reverse recovery

•

High forward surge capability

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Operating Tj from -40 °C to 175 °C

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Creepage distance of 3 mm as per IEC 60664-1

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ECOPACK2 compliant component

Applications

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Bootstrap function of SiC MOS-FETS

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Snubber diode

•

Switching diode

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC

MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible

performance of their controlled switches in all conditions. This rectifier will enhance

the performance of the targeted application.

Its improved creepage distance ensures the compatibility with industrial and

automotive creepage standards.

Product status link

STPSC2H12-Y

Product summary

IF(AV)

2 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

Automotive 1200 V, 2 A power Schottky silicon carbide diode

STPSC2H12-Y

Datasheet

DS13118 - Rev 1 - September 2019

For further information contact your local STMicroelectronics sales office.

www.st.com