CSD87381P

SLPS405F – MARCH 2013 – REVISED MARCH 2015

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5.4 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-ambient thermal resistance (min Cu) (1)

184

RθJA

Junction-to-ambient thermal resistance (max Cu) (2)(1)

84

°C/W

Junction-to-case thermal resistance (top of package) (1)

4.9

RθJC

Junction-to-case thermal resistance (PGND pin)

(1)

1.65

(1)

RθJC is determined with the device mounted on a 1 inch

2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches

(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board

design.

(2)

Device mounted on FR4 material with 1 inch2 (6.45 cm2) Cu.

5.5 Electrical Characteristics

TA = 25°C (unless otherwise stated)

Q1 Control FET

Q2 Sync FET

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

STATIC CHARACTERISTICS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250

30

30

V

BVDSS

μA

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 24

IDSS

1

1

μA

V

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 10

IGSS

100

100

nA

V

Gate-to-Source Threshold

VDS = VGS, IDS = 250

VGS(th)

1.1

1.9

1

1.7

V

Voltage

μA

VGS = 4.5 V, IDS = 8 A

15.7

18.9

7

8.4

RDS(on)

Drain-to-Source On-Resistance

m

Ω

VGS = 8 V, IDS = 8 A

13.6

16.3

6.3

7.6

gƒs

Transconductance

VDS = 10 V, IDS = 8 A

40

89

S

DYNAMIC CHARACTERISTICS

CISS

Input Capacitance (1)

434

564

1020

1320

pF

VGS = 0 V, VDS = 15

COSS

Output Capacitance (1)

V,

225

293

308

400

pF

ƒ = 1 MHz

CRSS

Reverse Transfer Capacitance (1)

9.1

11.8

40

52

pF

RG

Series Gate Resistance (1)

5

6.4

1.25

2.5

Ω

Qg

Gate Charge Total (4.5 V) (1)

3.9

5

8.9

11.5

nC

Qgd

Gate Charge – Gate-to-Drain

0.9

2.5

nC

VDS = 15 V,

IDS = 8 A

Qgs

Gate Charge – Gate-to-Source

1.2

2

nC

Qg(th)

Gate Charge at Vth

0.7

1.3

nC

Output Charge

VDD = 12 V, VGS = 0

4.9

8.5

nC

QOSS

V

td(on)

Turn On Delay Time

6.7

7.9

ns

VDS = 15 V, VGS = 4.5

tr

Rise Time

19.3

16.3

ns

V,

td(off)

Turn Off Delay Time

10.6

16.8

ns

IDS = 8 A, RG = 2 Ω

tƒ

Fall Time

3

2.9

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

IDS = 8 A, VGS = 0 V

0.85

0.79

V

Qrr

Reverse Recovery Charge

8

16

nC

Vdd = 15 V, IF = 8 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

13

17

ns

(1)

Specified by design

4

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