ISO7720DR.B datasheet(9/51 Pages) TI2

9 / 51 page

6.4 Thermal Information

THERMAL METRIC(1)

ISO772x

UNIT

DW (SOIC)

DWV (SOIC)

D (SOIC)

16 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

86.5

84.3

137.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

49.6

36.3

54.9

°C/W

RθJB

Junction-to-board thermal resistance

49.7

47.0

71.7

°C/W

ψJT

Junction-to-top characterization parameter

32.3

7.4

7.1

°C/W

ψJB

Junction-to-board characterization parameter

49.2

45.1

70.7

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ISO7720

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15

pF, Input 50-MHz 50% duty cycle square

wave

110

PD1

Maximum power dissipation (side-1)

PD2

Maximum power dissipation (side-2)

ISO7721

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

110

PD1

Maximum power dissipation (side-1)

PD2

Maximum power dissipation (side-2)

www.ti.com

ISO7720, ISO7721

SLLSEP3G – NOVEMBER 2016 – REVISED MAY 2024

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