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EMIF01-10018W5 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF01-10018W5 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Symbol Parameter and test conditions Value Unit VPP ESD discharge IEC1000-4-2, air discharge ESD discharge IEC1000-4-2, contact discharge ESD discharge MIL STD 883 Method 3015-6 16 9 25 kV Tj Junction temperature 150 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -55 to +150 °C TL Lead solder temperature (10 seconds duration) 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 7 8 V IRM VRM = 3V 100 nA RI/O 80 100 120 Ω Rd Ipp = 10 A, tp = 2.5 µs (see note 1) 1 Ω CIN at 0V bias 180 pF Note 1 : to calculate the ESD residual voltage, please refer to the paragraph "ESD PROTECTION" on pages 4 & 5 Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic resistance IPP Peak pulse current RI/O Series resistance between Input and Output CIN Input capacitance per line ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) V I V RM PP I RM I V BR R I V CL slope : 1 / R d EMIF01-10018W5 2/10 |
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