7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MIN

MAX

UNIT

VI

Input voltage (2)

–0.5

7

V

VI/O Input/output voltage (2)

–0.5

7

V

Continuous channel current

128

mA

IIK

Input clamp current

VI < 0

–50

mA

TJ

Junction temperature

150

°C

Tstg Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

The input and input/output negative-voltage ratings may be exceeded if the input and input/output clamp-current ratings are observed.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VI/O

Input/output voltage

0

5.5

V

Vref_A/B/EN

Reference voltage

0

5.5

V

IPASS

Pass transistor current

64

mA

TA

Operating free-air temperature

–40

125

°C

7.4 Thermal Information

THERMAL METRIC(1)

LSF0204

UNIT

RGY (VQFN)

RUT (UQFN)

PW (TSSOP)

YZP (DSBGA)

14 PINS

12 PINS

14 PINS

12 BALLS

RθJA

Junction-to-ambient thermal resistance

83.2

195.8

157.9

83.7

°C

RθJC(top) Junction-to-case (top) thermal resistance

98.2

98.7

82.3

0.6

°C

RθJB

Junction-to-board thermal resistance

59.2

122.6

100.0

23.7

°C

ψJT

Junction-to-top characterization parameter

17.4

6.2

22.9

0.4

°C

ψJB

Junction-to-board characterization parameter

59.4

122.6

99.0

23.7

°C

RθJC(bot) Junction-to-case (bottom) thermal resistance

38.7

N/A

N/A

N/A

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

LSF0204, LSF0204D

SLVSCP5H – JULY 2014 – REVISED APRIL 2021

www.ti.com

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