THERMAL DATA

Thermal Resistance Ju nction- case (transistor)

Max

Thermal Resistance Ju nction- case (diode)

Max

Thermal Resistance Case-heatsin k With Conductive

Grease Applied

Max

0.83

1.2

0.05

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Collecto r Cu t-of f

Ω)

1. 5

16

mA

mA

Collecto r Cu t-of f

1

11

mA

mA

Emitter Cut-off Current

1

mA

Sustaining Voltage

L = 25 mH

300

V

∗

DC Current Gain

300

∗ Collector-Emitter

Satu ration Vo ltage

1.25

1.4

1.5

1.8

1. 8

2. 2

V

V

V

V

∗ Base-Emitter

Satu ration Vo ltage

2.4

2.5

3

V

V

Rateof Riseof

On-state Collector

µs

220

260

A/

µs

µs)•• Collector-Emitter

Dynamic Voltage

Ω

36

V

µs)•• Collector-Emitter

Dynamic Voltage

Ω

2.2

4

V

Storage Time

Fall Time

Cross-over Time

Ω

L = 0. 06 mH

2

0.35

0.8

3

0. 6

1. 2

µs

µs

µs

Maximu m Collector

Emitter Voltage

With ou t Snubber

L= 0. 037 mH

Ω

300

V

∗

1. 6

V

Reverse Recovery

Current

µsL < 0.05 µH

12

17

A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

# See test circuit in databook introduction

To evaluate the conduction losses of the diode use the following equations:

2

F(RMS)

ESM2030DV

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