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ESM4045DV Datasheet(PDF) 2 Page - STMicroelectronics

Part # ESM4045DV
Description  NPN DARLINGTON POWER MODULE
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESM4045DV Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Rthj-ca se
Rthc -h
Thermal Resistance Junction-case (t ransistor)
Max
Thermal Resistance Junction-case (diode)
Max
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
0.83
1.5
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICER #
Collect or Cut-off
Current (RBE =5
Ω)
VCE =VCEV
VCE =VCEV
Tj =100
oC
1.5
20
mA
mA
ICEV #
Collect or Cut-off
Current (VBE =-5)
VCE =VCEV
VCE =VCEV
Tj =100
oC
1
13
mA
mA
IEBO #
Emitt er Cut-off Current
(IC =0)
VEB =5 V
1
mA
VCEO(SUS) * Collect or-Emitter
Sustaining Voltage
IC =0. 2 A
L =25 mH
Vcla mp = 450 V
450
V
hFE
∗
DC Current G ain
IC =35 A
VCE = 5 V
220
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =25 A
IB =0.5 A
IC =25 A
IB =0.5 A
Tj =100
o C
IC =35 A
IB =2 A
IC =35 A
IB =2 A
Tj =100
oC
1. 15
1.3
1.4
1.5
2
2
V
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =35 A
IB =2 A
IC =35 A
IB =2 A
Tj = 100
oC
2.3
2.3
3
V
V
diC/dt
Rate of Rise of
On-stat e Collector
VCC =300 V
RC =0
tp =3
µs
IB1 =0.75 A
Tj =100
oC
200
250
A/
µs
VCE (3
µs) Collector-Emitter
Dynamic Voltage
VCC =300 V
RC =12
Ω
IB1 =0.75 A
Tj =100
oC
4.5
8
V
VCE(5
µs) Collector-Emitter
Dynamic Voltage
VCC =300 V
RC =12
Ω
IB1 =0.75 A
Tj =100
oC
2.5
4.5
V
ts
tf
tc
St orage Time
Fall T ime
Cross-over T ime
IC =25A
VCC =50 V
VBB =-5 V
RBB =0.6
Ω
Vcla mp = 450 V
IB1 = 0.5 A
L= 0.1mH
Tj =100
oC
3.2
0. 25
0. 75
5
0.5
1.5
µs
µs
µs
VCEW
Maximum Collect or
Emitt er Volt age
Without Snubber
ICWoff =42 A
IB1 =2 A
VBB =-5 V
VCC =50 V
L = 0.06 mH
RBB =0.6
Ω
Tj = 125
oC
450
V
VF
∗
Diode Forward Volt age
IF =35 A
Tj = 100
oC1.5
1.85
V
IRM
Reverse Recovery
Current
VCC =200 V
IF =35 A
diF/dt = -200 A/
µsL < 0.05 µH
Tj = 100
oC
20
24
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
To evaluate the conduction losses of the diode use the following equations:
VF = 1.5 + 0.001 IF
P = 1.5 IF(AV) + 0.001 I
2
F(RMS)
# See test circuits in databook introduction
ESM4045DV
2/8



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