THERMAL DATA

Thermal Resistance Ju nction- case (transistor)

Max

Thermal Resistance Ju nction- case (diode)

Max

Thermal Resistance Case-heatsin k With Conductive

Grease Applied

Max

0.71

1.2

0.05

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Collecto r Cu t-of f

Ω)

1. 5

20

mA

mA

Collecto r Cu t-of f

1

13

mA

mA

Emitter Cut-off Current

1

mA

Sustaining Voltage

L = 25 mH

450

V

∗

DC Current Gain

150

∗ Collector-Emitter

Satu ration Vo ltage

1.2

1.4

1.4

1.6

2

2

V

V

V

V

∗ Base-Emitter

Satu ration Vo ltage

2.3

2.3

3

V

V

Rateof Riseof

On-state Collector

µs

300

400

A/

µs

µs)•• Collector-Emitter

Dynamic Voltage

Ω

4.5

8

V

µs)•• Collector-Emitter

Dynamic Voltage

Ω

2.5

4. 5

V

Storage Time

Fall Time

Cross-over Time

Ω

L = 0. 07 mH

3.2

0.25

0.75

5

0. 5

1. 5

µs

µs

µs

Maximu m Collector

Emitter Voltage

With ou t Snubber

L= 42

450

V

∗

1. 8

V

Reverse Recovery

Current

µsL < 0.05 µH

32

38

A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

To evaluate the conduction losses of the diode use the following equations:

2

F(RMS)

# See test circuits in databook introduction

ESM5045DV

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