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FERD20H100S Datasheet(PDF) 2 Page - STMicroelectronics

Part # FERD20H100S
Description  100 V, 20 A field-effect rectifier diode
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD20H100S Datasheet(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short
circuited)
Symbol Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
40
A
IF(AV)
Average forward current, δ = 0.5 square wave
TO-220AB,
DPAK, IPAK
TC = 155 °C
20
A
TO-220FPAB
TC = 110 °C
IFSM
Surge non repetitive forward current
DPAK, IPAK
tp = 10 ms sinusoidal
150
A
TO-220AB, TO-220FPAB
250
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(1)
+175
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter
Max. value
Unit
Rth(j-c)
Junction to case
TO-220AB, DPAK, IPAK
1.0
°C/W
TO-220FPAB
3.8
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
140
µA
Tj = 125 °C
-
8
16
mA
Tj = 125 °C
VR = 70 V
-
4
7
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 2 A
-
0.370
0.415
V
Tj = 125 °C
-
0.315
0.365
Tj = 25 °C
IF = 5 A
-
0.455
0.515
Tj = 125 °C
-
0.450
0.510
Tj = 25 °C
IF = 10 A
-
0.580
0.655
Tj = 125 °C
-
0.550
0.605
Tj = 125 °C
IF = 20 A
-
0.640
0.705
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.415 x IF(AV) + 0.019 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
FERD20H100S
Characteristics
DS11526 - Rev 4
page 2/16



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