Characteristics

FERD30H100S

2/13

DocID029159 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, with anode

terminals short circuited)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

45

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 145 °C

30

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal,

DPAK/IPAK

150

A

tp = 10 ms sinusoidal,

TO-220AB

250

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

+175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

0.9

°C/W

Table 4: Static electrical characteristics with anode terminals short circuited

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

130

µA

Tj = 125 °C

-

8

16

mA

Tj = 125 °C

VR = 70 V

-

4

7

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

-

0.390

0.440

V

Tj = 125 °C

-

0.350

0.405

Tj = 25 °C

IF = 5 A

-

0.440

0.495

Tj = 125 °C

-

0.415

0.470

Tj = 25 °C

IF = 10 A

-

0.550

0.620

Tj = 125 °C

-

0.530

0.585

Tj = 125 °C

IF = 30 A

-

0.680

0.745

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.424 x IF(AV) + 0.0133 IF2(RMS)