Page <2>

V1.0

25/09/19

Low Power

Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Parameter

Symbol

Test Condition

Min.

Typical

Max.

Unit

Collector Cut off Current

ICES

VCE = 70V, VBE = 0

Ta = 125°C

-

-

10

nA

VCE = 70V, VBE = 0

µA

Emitter Cut off Current

IEBO

VEB = 4V, IC = 0

10

nA

Collector-Emitter Voltage

VCES

IC = 10µA, VBE = 0

90

-

V

VCEO

IC = 5mA, I = 0

80

Emitter-Base Voltage

VEBO

IE = 10µA, IC = 0

6

Collector Emitter Saturation Voltage

VCE (Sat)*

IC = 10mA, IB = 0.5mA

-

0.25

IC = 100mA, IB = 5mA

0.3

-

Base Emitter On Voltage

VBE (on)*

IC = 2mA, VCE = 5V

0.55

-

0.75

Base Emitter Saturation Voltage

VBE (Sat)*

IC = 10mA, IB = 0.5mA

-

0.9

IC = 100mA, IB = 5mA

0.9

-

DC Current

hFE*

IC = 10µA, VCE = 5V

30

-

-

-

IC = 2mA, VCE = 5V

110

250

IC = 10mA, VCE = 5V

-

160

-

Small Signal Current Gain

hfe

IC = 2mA, VCE = 5V,

f = 1kHz

125

-

260

IC = 10mA, VCE = 5V,

f = 20MHz

-

7.5

-

Dynamic Characteristics

Collector Base Capacitance

Ccbo

IE = 0, VCB = 5V

-

-

6

pF

Emitter Base Capacitance

Cebo

IC = 0, VEB = 0.5V

15

pF

Noise Figure

NF

VCE = 5V, IC = 200µA

Rg = 2kΩ, f = 1kHz

B = 200Hz

10

dB

Electrical Characteristics: (TA = +25°C unless otherwise specified)

*Pulsed: Pulse Duration = 300μs, Duty Cycle = 1%