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SN6501DBVT.A Datasheet(PDF) 29 Page - Texas Instruments |
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SN6501DBVT.A Datasheet(HTML) 29 Page - Texas Instruments |
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29 / 38 page ![]() 10 Layout 10.1 Layout Guidelines • The VIN pin must be buffered to ground with a low-ESR ceramic bypass-capacitor. The recommended capacitor value can range from 1 μF to 10 μF. The capacitor must have a voltage rating of 10 V minimum and a X5R or X7R dielectric. • The optimum placement is closest to the VIN and GND pins at the board entrance to minimize the loop area formed by the bypass-capacitor connection, the VIN terminal, and the GND pin. See Figure 10-1 for a PCB layout example. • The connections between the device D1 and D2 pins and the transformer primary endings, and the connection of the device VCC pin and the transformer center-tap must be as close as possible for minimum trace inductance. • • The connection of the device VCC pin and the transformer center-tap must be buffered to ground with a low- ESR ceramic bypass-capacitor. The recommended capacitor value can range from 1μF to 10 μF. The capacitor must have a voltage rating of 16 V minimum and a X5R or X7R dielectric. • The device GND pins must be tied to the PCB ground plane using two vias for minimum inductance. • The ground connections of the capacitors and the ground plane should use two vias for minimum inductance. • The rectifier diodes should be Schottky diodes with low forward voltage in the 10 mA to 100 mA current range to maximize efficiency. • The VOUT pin must be buffered to ISO-Ground with a low-ESR ceramic bypass-capacitor. The recommended capacitor value can range from 1μF to 10 μF. The capacitor must have a voltage rating of 16 V minimum and a X5R or X7R dielectric. 10.2 Layout Example Figure 10-1. Layout Example of a 2-Layer Board (SN6501) www.ti.com SN6501 SLLSEA0I – FEBRUARY 2012 – REVISED JANUARY 2021 Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 29 Product Folder Links: SN6501 |
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