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AOB5B65M1 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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AOB5B65M1 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() ISG2255 eq AOB5B65M1 IGBT www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 1.8 ℃ /W STATIC CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE= 0V, IC= 1mA 650 -- -- V VGE(th) Gate-Emitter Threshold Voltage VGE= VCE, IC= 0.2mA 3.0 -- 5.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, VCE= 15V -- -- 1.98 V ICES Zero Gate Voltage Collector Current VCE= 650V, VGE= 0V -- -- 10.0 uA IGES Gate-Emitter Leakage Current VGE= ±20V, VCE= 0V -- -- ± 100 nA REVERSE DIODE (FRED) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VF Diode Forward Voltage IF= 5A, VGE= 0V, TJ= 25℃ -- -- 2.25 V IF= 5A, VGE= 0V,TJ= 125℃ -- 1.80 -- V |
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