STM32WBA62CI datasheet(117/185 Pages) STMICROELECTRONICS

117 / 185 page

DS14736 Rev 1

117/185

STM32WBA6xxx

Electrical characteristics

169

Table 49. Flash memory static power consumption(1)

Symbol

Parameter

Conditions

Typ

Unit

25 °C 55 °C

85 °C

IDD (Flash)

Static consumption in normal mode

PD = 1 versus PD = 0

91.47 95.63

105.26

µA

IDD (Flash_LPM)

Additional static consumption in

normal versus low-power mode

LPM = 1 versus LPM = 0 51.49 52.38

53.85

1. Evaluated by characterization, not tested in production, unless otherwise specified.

Table 50. Current consumption in Stop 0 mode(1)

Symbol

Parameter

Conditions

Typ

Unit

VDD

25 °C

55 °C

85 °C

IDD(Stop 0)

Supply current in Stop 0 mode,

no retention

LDO

Range 2

1.8 V

52.56

87.12

180.79

µA

2.4 V

52.92

87.68

180.98

3.0 V

53.55

88.61

182.45

3.3 V

54.35

90.20

185.82

3.6 V

56.52

95.08

199.54

Supply current in Stop 0 mode,

all retention (SRAM1 448K +

SRAM2 64K + PKA + OTG +

ICACHE)

1.8 V

59.73 101.71 216.76

2.4 V

60.02 102.13 216.83

3.0 V

60.66 103.01 218.25

3.3 V

61.55 104.78 222.34

3.6 V

63.88 110.24 238.32

IDD(Stop 0)

Supply current in Stop 0 mode,

SRAM2 retained

LDO

Range 2

1.8 V

53.58

89.57

187.01

µA

2.4 V

53.95

90.01

186.70

3.0 V

54.55

90.91

188.76

3.3 V

55.33

92.31

191.51

3.6 V

57.17

96.32

202.09

Supply current in Stop 0 mode,

ICACHE retained

1.8 V

52.67

87.47

181.74

2.4 V

53.06

87.95

181.50

3.0 V

53.68

88.78

183.20

3.3 V

54.36

90.19

186.04

3.6 V

56.07

93.76

195.24

STM32WBA62CI Datasheet(PDF) 117 Page - STMicroelectronics

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