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STM32WBA62CI Datasheet(PDF) 140 Page - STMicroelectronics |
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STM32WBA62CI Datasheet(HTML) 140 Page - STMicroelectronics |
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140 / 185 page ![]() Electrical characteristics STM32WBA6xxx 140/185 DS14736 Rev 1 Ilkg(1) I/O input leakage current(2)(3) All I/Os except FT_u VIN ≤ Max(VDDx) - - 150 nA Max(VDDx) < VIN ≤ Max(VDDx) + 1 V - - 2000 Max(VDDx) + 1 V < VIN ≤ 5.5 V(3) - - 500 FT_u I/Os VIN ≤ Max(VDDx) - - 200 Max(VDDx) < VIN ≤ Max(VDDx) + 1 V - - 2500 Max(VDDx) + 1 V < VIN ≤ 5.5 V(3) - - 500 RPU Weak pull-up equivalent resistor(4) -30 40 50 kΩ RPD Weak pull-down equivalent resistor(4) -30 40 50 CIO I/O pin capacitance -- 5 - pF 1. Specified by design, not tested in production. 2. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following formula: ITotal_Ileak_max = 10 μA + [number of I/Os where VIN is applied on the pad] x Ilkg max. 3. To sustain a voltage higher than min (VDD, VDDIO2, VDDUSB, VDDA) + 0.3 V, the internal pull-up and pull-down resistors must be disabled. 4. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10%). Table 75. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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