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TCAN330/G Datasheet(PDF) 21 Page - Texas Instruments

Part # TCAN330/G
Description  TCAN33x 3.3V CAN Transceivers with CAN FD (Flexible Data Rate)
PDF  47 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TCAN330/G Datasheet(HTML) 21 Page - Texas Instruments

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space. These ensure there is a minimum recessive amount of time on the bus even if the data field contains a
high percentage of dominant bits.
The short circuit current of the bus depends on the ratio of recessive to dominant bits and their respective short
circuit currents. The average short circuit current may be calculated with the following formula:
IOS(AVG) = %Transmit x [(%REC_Bits x IOS(SS)_REC ) + (%DOM_Bits x IOS(SS)_DOM)] + [%Receive x IOS(SS)_REC]
(1)
Where:
• IOS(AVG) is the average short circuit current
• %Transmit is the percentage the node is transmitting CAN messages
• %Receive is the percentage the node is receiving CAN messages
• %REC_Bits is the percentage of recessive bits in the transmitted CAN messages
• %DOM_Bits is the percentage of dominant bits in the transmitted CAN messages
• IOS(SS)_REC is the recessive steady state short circuit current
• IOS(SS)_DOM is the dominant steady state short circuit current
The short circuit current and possible fault cases of the network should be taken into consideration when sizing
the power ratings of the termination resistance and other network components.
6.3.8 ESD Protection
The bus pins of the TCAN33x family possess on-chip ESD protection against ±25kV human body model (HBM)
and ±12kV IEC61000-4-2 contact discharge. The IEC-ESD test is far more severe than the HBM-ESD test.
The 50% higher charge capacitance, CS, and 78% lower discharge resistance, RD of the IEC model produce
significantly higher discharge currents than the HBM-model.
As stated in the IEC 61000-4-2 standard, contact discharge is the preferred test method; although IEC air-gap
testing is less repeatable than contact testing, air discharge protection levels are inferred from the contact
discharge test results.
RC
RD
CS
High-Voltage
Pulse
Generator
Device
Under
Test
40
35
30
25
20
15
10
5
0
Time - ns
0
50
100
150
200
250
300
10kV IEC
10kV HBM
330Ω
(1.5k)
150pF
(100pF)
50M
(1M)
Figure 6-2. HBM and IEC-ESD Models and Currents in Comparison (HBM Values in Parenthesis)
6.3.9 Digital Inputs and Outputs
All the devices in this family are single 3.3V nominal supply devices. The digital logic input and output levels for
these devices have TTL threshold levels.
www.ti.com
TCAN330, TCAN332, TCAN334, TCAN337
TCAN330G, TCAN332G, TCAN334G, TCAN337G
SLLSEQ7F – DECEMBER 2015 – REVISED MAY 2025
Copyright © 2025 Texas Instruments Incorporated
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Product Folder Links: TCAN330 TCAN332 TCAN334 TCAN337 TCAN330G TCAN332G TCAN334G TCAN337G



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